Description
IRF7353D2PBF International Rectifier MOSFET, N CHANNEL, 30V, 0.023OHM, 6.5A, SOIC-8 RoHS
The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.023ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V , RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 6.5 A
Rds On – Drain-Source Resistance: 46 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Qg – Gate Charge: 22 nC
Pd – Power Dissipation: 2 W
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Height: 1.75 mm
Length: 4.9 mm
Transistor Type: 1 N-Channel
Width: 3.9 mm
Brand: Infineon / IR
Product Type: MOSFET
Factory Pack Quantity: 4000
Subcategory: MOSFETs
Part # Aliases: SP001566326
Unit Weight: 0.019048 oz
Lifecycle: Obsolete
Manufacturer Part Number: IRF7353D2PBF
Manufacturer: International Rectifier
Datasheet: IRF7353D2
