Description
IRFR3607TRPBF Infineon / IR MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg DPAK RoHS
The IRFR3607TRPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance and avalanche SOA. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Improved gate, avalanche and dynamic dV/dt ruggedness
Enhanced body diode dV/dt and di/dt capability
Applications
Power Management, Industrial
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 75 V
Id – Continuous Drain Current: 80 A
Rds On – Drain-Source Resistance: 7.34 mOhms
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 56 nC
Configuration: Single
Pd – Power Dissipation: 140 W
Packaging: Cut Tape
Packaging: Reel
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon / IR
Product Type: MOSFET
Factory Pack Quantity: 2000
Subcategory: MOSFETs
Part # Aliases: SP001567010
Unit Weight: 0.139332 oz
Manufacturer Part Number: IRFR3607TRPBF
Manufacturer: International Rectifier
