Description
IRFR5305TRPBF – MOSFET Transistor, P Channel, -31 A, -55 V, 65 mohm, -10 V, -4 V DPAK RoHS
Specifications
Product Category: MOSFET
Manufacturer: Infineon
RoHS: RoHS Compliant
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds – Drain-Source Breakdown Voltage: – 55 V
Id – Continuous Drain Current: – 31 A
Rds On – Drain-Source Resistance: 65 mOhms
Vgs – Gate-Source Voltage: 20 V
Vgs th – Gate-Source Threshold Voltage: – 4 V
Qg – Gate Charge: 42 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Packaging: Reel
Channel Mode: Enhancement
Brand: Infineon Technologies
Configuration: Single
Fall Time: 63 ns
Forward Transconductance – Min: 8 S
Height: 2.3 mm
Length: 6.5 mm
Pd – Power Dissipation: 110 W
Rise Time: 66 ns
Factory Pack Quantity: 2000
Transistor Type: 1 P-Channel
Type: HEXFET Power MOSFET
Typical Turn-Off Delay Time: 39 ns
Typical Turn-On Delay Time: 14 ns
Width: 6.22 mm
Unit Weight: 0.139332 oz
Manufacturer Part Number: IRFR5305TRPBF
Manufacturer: Infineon Technologies
