Description
MMBTA14 National Semiconductor Darlington NPN Transistor 30V 1.2A SOT-23
NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
Applications
- This product is general usage and suitable for many different applications.
Configuration: Single
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 30 V
Emitter- Base Voltage VEBO: 10 V
Collector- Base Voltage VCBO: 30 V
Maximum DC Collector Current: 300 mA
Maximum Collector Cut-off Current: 100 nA
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Manufacturer:National Semiconductor
Datasheet:NatMMBTA14.pdf
