Description
MOTOROLA – MOT MTB75N05HDT4 TRANSISTOR N-CHANNEL 50V 75A MOSFET N-CH D2PAK MOS
Specifications
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-263-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 50 V
Id – Continuous Drain Current: 75 A
Rds On – Drain-Source Resistance: 9.5 mOhms
Vgs – Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Packaging: Reel
Channel Mode: Enhancement
Brand: ON Semiconductor
Configuration: Single
Fall Time: 100 ns
Forward Transconductance – Min: 15 S
Height: 4.83 mm
Length: 10.29 mm
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 2.5 W
Rise Time: 170 ns
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 70 ns
Typical Turn-On Delay Time: 15 ns
Width: 9.65 mm
Unit Weight: 0.079014 oz
The D
2
PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower R
DS(on)
capabilities. This advanced
high–cell density HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Manufacturer:Motorola
Datasheet:MOTOS04140-1.pdf
