Description
NXP Semiconductor PHD21N06LT N-Channel MOSFET Transistor 55V 19A SMT / SMD DPAK SOT-428 RoHS
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current – Continuous Drain (Id) @ 25°C 19A (Tc)
Rds On (Max) @ Id, Vgs 70 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs 9.4nC @ 5V
Input Capacitance (Ciss) @ Vds 650pF @ 25V
Power – Max 56W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
GENERAL DESCRIPTION
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’ trench ’ technology
Manufacturer:NXP
Datasheet:NXP/PHB_PHD_PHP21N06LT.pdf
