Description
PMPB215ENEAX Nexperia NXP N-Channel Trench MOSFET – 80 V 1.9 A 230 mOhm DFN2020MD-6
Features
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
Product Attributes
Categories Discrete Semiconductor Products
Transistors – FETs, MOSFETs – Single
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current – Continuous Drain (Id) @ 25C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.7V @ 250uA
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V
Vgs (Max) 20V
Input Capacitance (Ciss) (Max) @ Vds 215pF @ 40V
Power Dissipation (Max) 1.6W (Ta)
Rds On (Max) @ Id, Vgs 230 mOhm @ 1.9A, 10V
Operating Temperature -55C ~ 150C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-DFN2020MD (2×2)
Package / Case 6-UDFN Exposed Pad
Manufacturer Part Number: PMPB215ENEAX
Manufacturer: NXP
