Description
SPA11N80C3XKSA1 Infineon N-Channel 800V 11A (Tc) 34W (Tc) Through Hole PG-TO220-FP
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 800 V
Id – Continuous Drain Current: 11 A
Rds On – Drain-Source Resistance: 390 mOhms
Vgs th – Gate-Source Threshold Voltage: 2.1 V
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 85 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 34 W
Channel Mode: Enhancement
Packaging: Tube
Height: 15.65 mm
Length: 10 mm
Series: XPA11N80
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon Technologies
Fall Time: 10 ns
Product Type: MOSFET
Rise Time: 15 ns
Factory Pack Quantity: 500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 72 ns
Typical Turn-On Delay Time: 25 ns
Part # Aliases: SP000216320 SPA11N80C3 SPA11N80C3XKSA1 XPA11N80
Unit Weight: 0.063493 oz
Manufacturer Part Number: SPA11N80C3XKSA1
Manufacturer: Infineon Technologies
