Description
Infineon Technologies AG SPB20N60C3ATMA1 Transistor N-Channel 650 V 0.19 Ohm Cool MOS Power Transistor – PG-TO263-3
Specifications:
Type Power MOSFET
Number of Elements 1
Polarity N
Channel Mode Enhancement
Drain-Source On-Res 0.19Ohm
Drain-Source On-Volt 650V
Gate-Source Voltage (Max) ±30V
Continuous Drain Current 20.7A
Power Dissipation 208W
Operating Temp Range -55C to 150C
Operating Temperature Classification Military
Mounting Surface Mount
Pin Count 2 +Tab
Package Type TO-263
Packaging Tape and Reel
Manufacturer Part Number: SPB20N60C3ATMA1
Manufacturer: Infineon Technologies
