Description
SUPETEX VN10KN3 310mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
SPECIFICATIONS
| Mfr Package Description | GREEN PACKAGE-3 |
| REACH Compliant | Yes |
| EU RoHS Compliant | Yes |
| Status | Transferred |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 0.31 A |
| Drain Current-Max (ID) | 0.31 A |
| Drain-source On Resistance-Max | 5.0 ohm |
| DS Breakdown Voltage-Min | 60.0 V |
| Feedback Cap-Max (Crss) | 5.0 pF |
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Manufacturer:Microchip Technology
Datasheet:Others/SUPRS03833-1.pdf
