Description
IPD025N06N Infineon N-Channel 60V 90A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TO252-3
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 90 A
Rds On – Drain-Source Resistance: 2.1 mOhms
Vgs th – Gate-Source Threshold Voltage: 2.1 V
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 83 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd – Power Dissipation: 167 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Height: 2.3 mm
Length: 6.5 mm
Series: OptiMOS 5
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 80 S
Fall Time: 12 ns
Product Type: MOSFET
Rise Time: 20 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 34 ns
Typical Turn-On Delay Time: 16 ns
Part # Aliases: IPD025N06NATMA1 IPD25N6NXT SP000988276
Unit Weight: 0.139332 oz
Manufacturer Part Number: IPD025N06N
Manufacturer: Infineon Technologies
