Description
SAMSUNG – IRF840 N-Channel Tube 850m Ω @ 3.5A, 10V ±20V 832pF @ 25V 39nC @ 10V 500V TO-220-3
Package TO-220-3
Transistor Polarity N
Maximum Drain Source Voltage 500 V
Maximum Continuous Drain Current 8 A
Maximum Gate Source Voltage ±20V
Power Dissipation 44 W
Number of Elements per Chip 1
Maximum Forward Voltage 500VDC
Output Power 44W
Peak Non-Repetitive Surge Current 32A
Maximum Reverse Current 10uA
Channel Mode N-Channel Enhancement
Peak Reverse Recovery Time 125ns
Channel Type N
Repetitive Peak Reverse Voltage 500VDC
Configuration Single
Maximum Drain Source Resistance 0.8 Ohms@10V
Category Power MOSFET
Maximum Forward Current 8A
Typical Fall Time 75ns
Typical Gate Charge @ Vgs 41nC@10V
Typical Input Capacitance @ Vds 1400pf@25V
Typical Rise Time 65ns
Typical Turn-Off Delay Time 125ns
Typical Turn-On Delay Time 22ns
Minimum Operating Temperature -55°C
Maximum Operating Temperature 150°C
Mounting Through Hole
Packaging Bulk
Pins 3
Product Type MOSFET
Datasheet:irf840_samsung.pdf
