Description
K6X0808C1D-BF55 Samsung Semiconductor Volatile SRAM Parallel Memory 256Kbit 32K x 8 55ns SRAM – Asynchronous 4.5V ~ 5.5V Surface Mount 28-SOP. The K6X0808C1D families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support verious operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
FEATURES
·Process Technology: Full CMOS
·Organization: 32K x 8
·Power Supply Voltage: 4.5~5.5V
·Low Data Retention Voltage: 2V(Min)
·Three state output and TTL Compatible
·Package Type: 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4F/R
Memory Format: SRAM
Technology: SRAM – Asynchronous
Memory Size: 256Kbit
Memory Organization: 32K x 8
Memory Interface: Parallel
Voltage – Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Device Package: 28-SOP
Package: Tube
Manufacturer Part #: K6X0808C1D-BF55
Manufacturer: Samsung Semiconductor
Datasheet: K6X0808C1D
